BLF2022-70

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 www.DataSheet4U.com Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A: – Output power = 7.5 W (AV) – Gain = 12.5 dB – Efficiency = 20% – ACPR = −42 dBc at 3.84 MHz – dim = −36 dBc Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed for broadband operation (2000 to 2200 MHz) Internally matched for ease of use. Top view 2 handbook, halfpage BLF2022-70 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 3 MBK394 APPLICATIONS RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PL (W) 65 (PEP) Gp (dB) >11 ηD (%) >30 dim (dBc) ≤−25 Fig.1 Simplified outline. 2003...