BLF2022-120

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor FEATURES High power gain Easy power control Excellent ruggedness Source on underside eliminates DC isolators, reducing common mode inductance Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range. DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 PL (W) 120 (PEP) Gp (dB) >11 Top view 1 2 BLF2022-120 PINNING - SOT539A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION 5 3 4 MBK880 Fig.1 Simplified outline. ηD (%) >30 dim (dBc) ≤−25 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during tr...