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BFG310W/XR
NPN 14 GHz wideband transistor
Rev. 01 — 2 February 2005 Product data sheet
1. Product ...
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BFG310W/XR
NPN 14 GHz wideband
transistor
Rev. 01 — 2 February 2005 Product data sheet
1. Product profile
1.1 General description
NPN silicon planar epitaxial
transistor in a 4-pin dual-emitter SOT343R plastic package.
1.2 Features
s s s s High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability
1.3 Applications
s Intended for Radio Frequency (RF) front end applications in the GHz range, such as: x analog and digital cellular telephones x cordless telephones (Cordless Telephone (CT), Personal Communication Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.) x radar detectors x pagers x Satellite Antenna TeleVision (SATV) tuners
1.4 Quick reference data
Table 1: VCBO VCEO IC Ptot hFE CCBS fT Quick reference data Conditions open emitter open base Tsp ≤ 145 °C IC = 5 mA; VCE = 3 V; Tj = 25 °C VCB = 5 V; f = 1 MHz; emitter grounded IC = 5 mA; VCE = 3 V; f = 1 GHz; Tamb = 25 °C
[1]
Symbol Parameter collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain collector-base capacitance transition frequency
Min 60 -
Typ 100 0.17 14
Max 15 6 10 60 200 0.3 -
Unit V V mA mW
pF GHz
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Philips Semiconductors
BFG310W/XR
NPN 14 GHz wideband
transistor
Quick reference data …continued Conditions IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C IC = 5 mA; VCE = 3 V; f = 1.8 GHz; Tamb = 25 °C; ZS = ZL = 50 Ω Γs = Γopt; IC = ...