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BF423L

NXP

(BF421L / BF423L) PNP high-voltage transistors

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421L; BF423L PNP high-voltage transis...


NXP

BF423L

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF421L; BF423L PNP high-voltage transistors Product specification Supersedes data of 1999 Apr 21 2004 Nov 10 www.DataSheet4U.com Philips Semiconductors Product specification PNP high-voltage transistors FEATURES Low current (max. 50 mA) High voltage (max. 300 V) Available with a higher power rating (830 mW) under type number: BF423. APPLICATIONS Primarily intended for telephony applications. 1 handbook, halfpage BF421L; BF423L PINNING PIN 1 2 3 base collector emitter DESCRIPTION DESCRIPTION PNP transistor in a TO-92; SOT54 plastic package. NPN complement: BF422L. Fig.1 2 3 2 1 3 MAM285 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BF421L BF423L LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO BF421L BF423L VCEO collector-emitter voltage BF421L BF423L VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −300 −250 −5 −50 −100 −100 625 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −300 −250 V V MIN. MAX. UNIT SC-43A DESCRIPTION plastic single-ended leaded (through hole) package; 3 leads VERSION SOT54 2004 Nov 10 2 www.DataSheet...




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