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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs
Product...
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs
Product specification 2003 Nov 14
www.DataSheet4U.com
Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs
FEATURES Short channel
transistor with high forward transfer admittance to input capacitance ratio Low noise gain controlled amplifier Excellent low frequency noise performance Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization. APPLICATIONS Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications. DESCRIPTION Enhancement type N-channel field-effect
transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1212, BF1212R and BF1212WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.
BF1212; BF1212R; BF1212WR
PINNING PIN 1 2 3 4 source drain gate 2 gate 1 DESCRIPTION
handbook, 2 columns 4
3
1 Top view
2
MSB014
BF1212; marking code: LGp
Fig.1 Simplified outline (SOT143B).
handbook, 2 columns 3
4
handbook, halfpage
3
4
2 Top view BF1212R; marking code: LKp
1 2
MSB035
1
MSB842
Top view BF1212WR; marking code: ML
Fig.2 Simplified outline (SOT143R).
Fig.3 Simplified outline (SOT343R).
QUICK REFERENCE DATA SYMBOL VDS ID Ptot yfs Cig1-ss Crss F Xmod Tj PARAMETER drain-source volta...