Low-voltage variable capacitance diode
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB145C Low-voltage variable capacitance diode
Prelimin...
Description
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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB145C Low-voltage variable capacitance diode
Preliminary specification 2001 Dec 11
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Philips Semiconductors Preliminary specification
Low-voltage variable capacitance diode
FEATURES Ultra small plastic SMD package Very low capacitance spread High capacitance ratio C1 to C4 ratio: min. 2.39, max. 2.53. APPLICATIONS Voltage Controlled Oscillators (VCO). DESCRIPTION The BB145C is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 ultra small plastic SMD package. MARKING TYPE NUMBER BB145C MARKING CODE K3 PINNING PIN 1 2
BB145C
DESCRIPTION
Cathode side indicated by a bar.
anode
cathode
handbook, 1 2 columns
2
MBK441
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR VRM IF Tstg Tj PARAMETER continuous reverse voltage peak reverse voltage continuous forward current storage temperature operating junction temperature in series with a 10 kΩ resistor CONDITIONS − − − −55 −55 MIN. MAX. 10 12 20 +150 +150 V V mA °C °C UNIT
CHARACTERISTICS Tj = 25 °C unless otherwise specified SYMBOL IR rs Cd C d ( 1V ) ---------------C d ( 4V ) PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 15 V; see Fig.3 VR = 15 V; Tj = 85 °C VR = 1 V; f = 470 MHz VR = 1 V; f = 1 MHz VR = 4 V; f = 1 MHz f = 1 MHz − − − 6.4 2.55 2.3...
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