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LPD200P70

Filtronic Compound Semiconductors
Part Number LPD200P70
Manufacturer Filtronic Compound Semiconductors
Description PACKAGED HIGH DYNAMIC RANGE PHEMT
Published Mar 22, 2005
Detailed Description PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at ...
Datasheet PDF File LPD200P70 PDF File

LPD200P70
LPD200P70

Overview
PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 20 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.
5 dB Power Gain at 18 GHz ♦ 16 dB Small Signal Gain at 2 GHz ♦ 0.
8 dB Noise Figure at 2 GHz LPD200P70 • DESCRIPTION AND APPLICATIONS The LPD200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µ m by 200 µ m Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for high dynamic range.
The LPD200’s active areas are passivated w...


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