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LPD200MX

Filtronic Compound Semiconductors
Part Number LPD200MX
Manufacturer Filtronic Compound Semiconductors
Description HIGH PERFORMANCE PHEMT
Published Mar 22, 2005
Detailed Description PRELIMINARY DATA SHEET PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 1.0 dB Noise Figure at 1.8 GHz ♦ 15.5 dBm P-1dB 1...
Datasheet PDF File LPD200MX PDF File

LPD200MX
LPD200MX

Overview
PRELIMINARY DATA SHEET PACKAGED HIGH DYNAMIC RANGE PHEMT • FEATURES ♦ 1.
0 dB Noise Figure at 1.
8 GHz ♦ 15.
5 dBm P-1dB 1.
8 GHz, 17dBm@6GHz, 10.
5dBm@12GHz ♦ 19 dB Power Gain at 1.
8 GHz, 10dB@6GHz, 8dB@12GHz ♦ 31 dBm IP3 at 1.
8 GHz ♦ 60% Power-Added-Efficiency LPD200MX • DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µm by 200 µm Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for high dynami...


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