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DC COMPONENTS CO., LTD.
R
SC5094
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXI...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
SC5094
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for low noise amplifier at VHF, UHF and CATV band.
SOT-23
.020(0.50) .012(0.30)
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 18 10 2.5 20 150 +125 -50 to +125 Unit V V V mA mW
o o
.026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90)
.0043(0.11) .0035(0.09)
.004 Max (0.10)
C
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector Cutoff Current Emitter Cutoff Current DC Current Gain(1) Transition Frequency Minimum Noise Figure Associated Gain Insertion Gain S21 in 50Ω system (1)Pulse Test: Pulse Width
2
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol ICBO IEBO hFE fT NFmin GA S21
2
Min 50 2%
Typ 80 7.6 9 1.4 1.6 12 13.5 12.8 13.5
Max 1 1 160 -
Unit µA µA GHz GHz dB dB dB dB dB dB
Test Conditions VCB=3V VEB=1V IC=1mA, VCE=2V IC=10mA, VCE=1V IC=12mA, VCE=3V IC=4.2mA, VCE=2V, f=0.9GHz IC=4.5mA, VCE=5V, f=0.9GHz IC=4.2mA, VCE=2V, f=0.9GHz IC=4.5mA, VCE=5V, f=0.9GHz IC=4.2m...