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MPSA42M
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAX...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
MPSA42M
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.190(4.83) .170(4.33)
.190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 300 300 6 800 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
3 2 1
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT 380µs, Duty Cycle
Min 300 300 6 80 80 40 50 2%
Typ -
Max 0.1 0.2 0.75 0.9 1 -
Unit V V V µA V V V V MHz
Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VEB=3V, IC=0 IC=20mA, IB=2mA IC=100mA, IB=10mA IC=20mA, IB=2mA IC=100mA, IB=10mA IC=10mA, VCE=10V IC=100mA, VCE=10V IC=200mA, VCE=10V IC=10mA, VCE=20V, f=100MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Vol...