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PD - 96965A
PDP MOSFET
Features l Advanced process technology l Key parameters optimized for PDP Sustain & Energy Recovery applications l Low EPULSE rating to reduce the power dissipation in Sustain & ER applications l Low QG for fast response l High repetitive peak current capability for reliable operation l Short fall & rise times for fast switching l175°C operating junction temperature for improved ruggedness l Repetitive avalanche capability for robustness and reliability
IRFP4232PbF
Key Parameters
250 300 30 310 117 175
D
VDS min VDS (Avalanche) typ. RDS(ON) typ. @ 10V EPULSE typ. IRP max @ TC= 100°C TJ max
V V m: µJ A °C
G S
TO-247AC
Description This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS VGS (TRANSIENT) ID @ TC = 25°C ID @ TC = 100°C IDM IRP @ TC = 100°C PD @TC = 25°C PD @TC = 100°C TJ TSTG Gate-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Repetitive Peak Current g Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
±20 ±30 60 42 240 117 430 210 2.9 -40 to + 175
Units
V A
W W/°C °C
Thermal Resistance
Parameter
RθJC Junction-to-Case f
Typ.
–––
Max.
0.35
Units
°C/W
Notes through
are on page 8
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1
04/21/05
IRFP4232PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgd tst EPULSE Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Drain Charge Shoot Through Blocking Time Energy per Pulse
Min.
250 ––– ––– 3.0 ––– ––– ––– ––– ––– 95 ––– ––– 100 ––– –––
Typ. Max. Units
––– 180 30 ––– -15 ––– ––– ––– ––– ––– 160 60 ––– 310 950 7290 610 240 420 5.0 13 ––– ––– 35.7 5.0 ––– 5.0 150 100 -100 ––– 240 ––– ––– ––– ––– ––– ––– ––– ––– ––– nH ––– pF ns µJ S nC nA V mΩ V mV/°C µA
Conditions
VGS = 0V, ID = 250µA VGS = 10V, ID = 42A e VDS = VGS, ID = 250µA VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 25V, ID = 42A VDD = 125V, ID = 42A, VGS = 10Ve VDD = 200V, VGS = 15V, RG= 4.7Ω L = 220nH, C= 0.4µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 25°C L = 220nH, C= 0.4µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 100°C VGS = 0V VDS = 25V ƒ = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact
G S
mV/°C Reference to 25°C, ID = 1mA
Ciss Coss Crss Coss eff. LD LS
Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
––– ––– ––– ––– ––– –––
See Fig.9
VGS = 0V, VDS = 0V to 200V
D
Avalanche Characteristics
Parameter Typ. Max. Units mJ mJ V A
EAS EAR VDS(Avalanche) IAS
Single Pulse Avalanche Energyd Repetitive Avalanche Energy c Repetitive Avalanche Voltage Avalanche Current d c
––– ––– 300 –––
220 43 ––– 42
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current (Body Diode) ISM VSD trr Qrr Pulsed Source Current (Body Diode) c ––– ––– ––– ––– 240 1230 1.0 360 1850 V ns nC Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ––– ––– 240
Min.
–––
Typ. Max. Units
––– 60 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 42A, VGS = 0V e TJ = 25°C, IF = 42A, VDD = 50V di/dt = 100A/µs e
2
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IRFP4232PbF
1000
TOP VGS 15V 10V 8.0V 7.0V
1000
TOP VGS 15V 10V 8.0V 7.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
7.0V
100
7.0V
10
10
≤ 60µs PULSE WIDTH Tj = 25°C
1 0.1 1 10 100
≤ 60µs PULSE WIDTH Tj = 175°C
1 0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
4.0
RDS(on) , Drain-to-Source On Resistance
ID = 42A
3.0
ID, Drain-to-Source Current(Α)
VGS = 10V
100
TJ = 175°C
(Normalized)
2.0
10
TJ = 25°C
1.0
VDS = 30V
1 4.0 5.0 6.0
≤ 60µs PULSE WIDTH
7.0 8.0
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
.