Document
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PD- 93924
PROVISIONAL
IRFBA32N50K
HEXFET® Power MOSFET
SMPS MOSFET
Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current
l
VDSS
500V
RDS(on)
0.14Ω
ID
32A
Super-220™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Recommended clip force
Max.
32 20 128 360 2.9 ± 30 5.0 -55 to + 150 300 20
Units
A W W/°C V V/ns
°C N
Diode Characteristics
Symbol IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 32 ––– ––– showing the A G integral reverse ––– ––– 128 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V ––– 650 ––– ns TJ = 125°C, IF = 32A ––– 9.0 ––– µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l l l
Hard Switching Full and Half Bridge Circuits Hard Switching Single Transistor Circuits Power Factor Correction Circuits
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IRFBA32N50K
Symbol V(BR)DSS
∆V(BR)DSS/∆TJ
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.14 Ω VGS = 10V, ID = 19A 3.5 ––– 5.5 V VDS = V GS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V
RDS(on) VGS(th) IDSS IGSS
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 20 60 45 40 5300 540 33 Max. Units Conditions ––– S VDS = 50V, ID = 19A 195 ID = 32A 75 nC VDS = 400V 90 VGS = 10V, ––– VDD = 250V ––– ID = 32A ns ––– RG = 4.3Ω ––– VGS = 10V, ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
760 32 36
Units
mJ A mJ
Thermal Resistance
Symbol
RθJC RθCS RθJA Notes:
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
––– 0.50 –––
Max.
0.35 ––– 58
Units
°C/W
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 4.3mH, RG = 25Ω,
IAS = 32A,
ISD ≤ 32A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
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PROVISIONAL
IRFBA32N50K
Super-220™ Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00
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