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IRFBA32N50K Dataheets PDF



Part Number IRFBA32N50K
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRFBA32N50K DatasheetIRFBA32N50K Datasheet (PDF)

www.DataSheet4U.com PD- 93924 PROVISIONAL IRFBA32N50K HEXFET® Power MOSFET SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current l VDSS 500V RDS(on) 0.14Ω ID 32A Super-220™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = .

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www.DataSheet4U.com PD- 93924 PROVISIONAL IRFBA32N50K HEXFET® Power MOSFET SMPS MOSFET Applications Telecom and Data-Com off-Line SMPS l UninterruptIble Power Supply Benefits l Low On-Resistance l High Speed Switching l Low Gate Drive Current Due to Improved Gate Charge Characteristics l Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Voltage and Current l VDSS 500V RDS(on) 0.14Ω ID 32A Super-220™ Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Recommended clip force Max. 32 20 128 360 2.9 ± 30 5.0 -55 to + 150 300 20 Units A W W/°C V V/ns °C N Diode Characteristics Symbol IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 32 ––– ––– showing the A G integral reverse ––– ––– 128 S p-n junction diode. ––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V „ ––– 650 ––– ns TJ = 125°C, IF = 32A ––– 9.0 ––– µC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Typical SMPS Topologies l l l Hard Switching Full and Half Bridge Circuits Hard Switching Single Transistor Circuits Power Factor Correction Circuits www.irf.com 1 6/2/00 IRFBA32N50K Symbol V(BR)DSS ∆V(BR)DSS/∆TJ PROVISIONAL Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 ––– ––– V VGS = 0V, ID = 250µA ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA† ––– ––– 0.14 Ω VGS = 10V, ID = 19A „ 3.5 ––– 5.5 V VDS = V GS, ID = 250µA ––– ––– 50 µA VDS = 500V, VGS = 0V ––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C ––– ––– 100 VGS = 30V nA ––– ––– -100 VGS = -30V RDS(on) VGS(th) IDSS IGSS Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 12 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– 20 60 45 40 5300 540 33 Max. Units Conditions ––– S VDS = 50V, ID = 19A 195 ID = 32A 75 nC VDS = 400V 90 VGS = 10V, „ ––– VDD = 250V ––– ID = 32A ns ––– RG = 4.3Ω ––– VGS = 10V, „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 760 32 36 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Notes: Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. ––– 0.50 ––– Max. 0.35 ––– 58 Units °C/W  Repetitive rating; pulse width limited by max. junction temperature. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. ‚ Starting TJ = 25°C, L = 4.3mH, RG = 25Ω, IAS = 32A, ƒ ISD ≤ 32A, di/dt ≤ TBDA/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C 2 www.irf.com PROVISIONAL IRFBA32N50K Super-220™ Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN: 16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 6/00 www.irf.com 3 .


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