IRF7807VPBF

www.DataSheet4U.com PD-95210 IRF7807VPbF N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free HEXFET® Power MOSFET S S S 1 2 3 4 8 7 • • A D D D D 6 5 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. G SO-8 T o p V ie w DEVICE CHARACTERISTICS… RDS(on) QG QSW QOSS IRF7807V 17 mΩ 9.5 nC 3.4 nC 12 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source TA = 25°C TA = 70°C TA = 25°C TA = 70°C (VGS ≥ 4.5V) Symbol VDS VGS ID IDM PD TJ , TSTG IS ISM IRF7807V 30 ±20 8.3 6.6 66 2.5 1.6 -55 to 150 2.5 66 Units V ™ Power Dissipation eÃÃÃÃÃÃà Pulsed Drain Current Pulsed Source Current A W °C A Junction & Storage Temperature Range Continuous Source Current (Body Diode) ™ Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead h eh Symbol RθJA RθJL Typ ––– ––– Max 50 20 Units °C/W 11/3/04 IRF7807VPbF Electrical Characteristics Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain...