Document
FEDS54V16273-05 www.DataSheet4U.com
¡ Semiconductor MSM54V16273
262,144-Word ¥ 16-Bit Multiport DRAM
This version: Feb. 2000 Previous version: Jan. 1998
DESCRIPTION
The MSM54V16273 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM54V16273 features block write, flash write functions, extended page mode on the RAM port, a split data transfer capability, and programmable stops on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 3.3 V ± 0.3 V • RAS only refresh • Full TTL compatibility • CAS before RAS refresh • Multiport organization • CAS before RAS self-refresh RAM : 256K word ¥ 16 bits • Hidden refresh SAM : 512 word ¥ 16 bits • Serial read/write • Extended page mode • 512 tap location • Write per bit • Programmable stops • Persistent write per bit • Bidirectional data transfer • Byte read/write • Split transfer • Masked flash write • Masked write transfer • Masked block write (8 columns) • Refresh: 512 cycles/8 ms • Package options: 64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K) (Product : MSM54V16273-xxGS-K) 70/64-pin 400 mil plastic TSOP (Type II)(TSOPII70/64-P-400-0.65-K)(Product : MSM54V16273-xxTS-K) xx indicates speed rank.
PRODUCT FAMILY
Family MSM54V16273-60 MSM54V16273-70 Access Time RAM 60 ns 70 ns SAM 18 ns 20 ns Cycle Time RAM 120 ns 140 ns SAM 22 ns 22 ns Power Dissipation Operating 160 mA 150 mA Standby 8 mA 8 mA
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PIN CONFIGURATION (TOP VIEW)
VCC TRG VSS SDQ0 DQ0 SDQ1 DQ1 VCC SDQ2 DQ2 SDQ3 DQ3 VSS SDQ4 DQ4 SDQ5 DQ5 VCC SDQ6 DQ6 SDQ7 DQ7 VSS CASL WE RAS A8 A7 A6 A5 A4 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 SC SE VSS SDQ15 DQ15 SDQ14 DQ14 VCC SDQ13 DQ13 SDQ12 DQ12 VSS SDQ11 DQ11 SDQ10 DQ10 VCC SDQ9 DQ9 SDQ8 DQ8 VSS DSF NC CASU QSF A0 A1 A2 A3 VSS VCC TRG VSS SDQ0 DQ0 SDQ1 DQ1 VCC SDQ2 DQ2 SDQ3 DQ3 VSS SDQ4 DQ4 SDQ5 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 DQ5 VCC SDQ6 DQ6 SDQ7 DQ7 VSS CASL WE RAS A8 A7 A6 A5 A4 VCC 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35
FEDS54V16273-05 MSM54V16273
70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55
SC SE VSS SDQ15 DQ15 SDQ14 DQ14 VCC SDQ13 DQ13 SDQ12 DQ12 VSS SDQ11 DQ11 SDQ10
51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36
DQ10 VCC SDQ9 DQ9 SDQ8 DQ8 VSS DSF NC CASU QSF A0 A1 A2 A3 VSS
64-Pin Plastic SSOP
70/64-Pin Plastic TSOP (II) (K Type)
Pin Name A0 - A8 DQ0 - DQ15 SDQ0 - SDQ15 RAS CASL CASU WE TRG
Function Address Input RAM Inputs/Outputs SAM Inputs/Outputs Row Address Strobe Column Address Strobe Lower Column Address Strobe Upper Write Enable Transfer/Output Enable
Pin Name SC SE DSF QSF VCC VSS NC
Function Serial Clock SAM Port Enable Special Function Input Special Function Output Power Supply (3.3 V) Ground (0 V) No Connection
Note:
The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
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BLOCK DIAGRAM
Column Address Buffer
Column Decoder
Block Write Control I/O Control
Column Mask Register Color Register Mask Register RAM Input Buffer DQ 0 - 15 RAM Output Buffer
Sense Amp.
Row Decoder
Row Address Buffer
512 ¥ 512 ¥ 16 RAM ARRAY
Flash Write Control SAM Input Buffer SDQ 0 - 15 SAM Output Buffer Timing Generator
A0 - A8
Refresh Counter
Gate SAM
Gate SAM
RAS CASU / CASL TRG WE DSF SC
Serial Decoder SAM Address Buffer
SAM Address Counter SE SAM Stop Control
QSF
SE
FEDS54V16273-05
VCC VSS
MSM54V16273
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MSM54V16273
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(Note: 1) Parameter Input Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD Topr Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C — — Rating –0.5 to 4.6 50 1 0 to 70 –55 to 150 Unit V mA W °C °C
Recommended Operating Conditions
(Ta = 0°C to 70°C) (Note: 2) Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min. 3.0 2.0 –0.3 Typ. 3.3 — — Max. 3.6 VCC + 0.3 0.8 Unit V V V
Capacitance
(VCC = 3.3 V ±0.3 V, f = 1 MHz, Ta = 25°C) Parameter Input Capacitance Input/Output Capacitance Output Capacitance Symbol Ci Cio Co(QSF) Min. — — — Max. 6 7 7 Unit pF pF pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter Output "H" Level Voltage Output "L" Level Voltage Input Leakage Current Symbol VOH VOL.