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MSM5416258A Dataheets PDF



Part Number MSM5416258A
Manufacturers OKI electronic
Logo OKI electronic
Description DYNAMIC RAM
Datasheet MSM5416258A DatasheetMSM5416258A Datasheet (PDF)

E2L0047-28-Z2 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM5416258A DESCRIPTION This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate technology. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer.

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E2L0047-28-Z2 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM5416258A DESCRIPTION This version: Dec. 1998 MSM5416258A Previous version: Jan. 1998 262,144-Word ¥ 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO The MSM5416258A is a 262,144-word ¥ 16-bit dynamic RAM fabricated in Oki's CMOS silicon gate technology. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption because Oki manufactures the device in a quadruple-layer polysilicon/double-layer metal CMOS process. The MSM5416258A is available in a 44/40-pin plastic TSOP. FEATURES • 262,144-word ¥ 16-bit configuration • Single 5.0 V power supply, ± 0.5 V tolerance • Input: TTL compatible • Output: TTL compatible, 3-state • Refresh: 512 cycles/8 ms • Fast page mode with EDO, read modify write capability • Byte wide control: 2 CAS control • CAS before RAS refresh, hidden refresh, RAS only refresh capability • Package : 44/40-pin 400 mil plastic TSOP (Type II) (TSOPII44/40-P-400-0.80-K) (Product : MSM5416258A-xxTS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM5416258A-40 MSM5416258A-45 Access Time (Max.) tRAC tAA tCAC tOEA 40 ns 22 ns 10 ns 10 ns 45 ns 24 ns 12 ns 12 ns Cycle Time (Min.) tRC 80 ns 90 ns tHPC 15 ns 20 ns Power Dissipation (Max.) 825 mW 770 mW 1/21 www.DataSheet4U.com ¡ Semiconductor MSM5416258A PIN CONFIGURATION (TOP VIEW)  VCC DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 1 2 3 4 5 6 7 8 9 10 VSS* NC WE RAS NC A0 A1 A2 A3 VCC 13 14 15 16 17 18 19 20 21 22 44/40-Pin Plastic TSOP (II) (K Type) Pin Name A0 - A8 RAS LCAS, UCAS DQ0 - DQ15 WE OE VCC VSS NC VSS* Address Input Write Enable Output Enable Ground (0 V) No Connection Ground (0 V)* 44 43 42 41 40 39 38 37 36 35 32 31 30 29 28 27 26 25 24 23 VSS DQ15 DQ14 DQ13 DQ12 VSS DQ11 DQ10 DQ9 DQ8 VSS* LCAS UCAS OE A8 A7 A6 A5 A4 VSS Function Row Address Strobe Column Address Strobe Data - Input / Data - Output Power Supply (5.0 V) Note: The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. *: For improved signal integrity, it is recommended to connect the VSS* pins, pin 13 and pin 32, to GND: the pins are electrically connected to internal GND. 2/21 www.DataSheet4U.com ¡ Semiconductor MSM5416258A BLOCK DIAGRAM OE RAS LCAS UCAS Timing Generator WE I/O Controller I/O Controller 8 Output Buffers 8 DQ0 - DQ7 9 Column Address Buffers Internal Address Counter Row Address Buffers 9 Column Decoders 8 I/O Selector 16 Input Buffers Input Buffers 8 A0 - A8 Refresh Control Clock Sense Amplifiers 16 8 9 9 Row Decoders Word Drivers Memory Cells 8 8 DQ8 - DQ15 Output Buffers 8 VCC On-chip VBB Generator VSS FUNCTION TABLE Input Pin RAS H L L L L L L L L LCAS * H L H L L H L L UCAS * H H L L H L L L WE * * H H H L L L H OE * * L L L H H H H High-Z High-Z DOUT High-Z DOUT DIN Don't Care DIN High-Z DQ Pin DQ0 - DQ7 DQ8 - DQ15 High-Z High-Z High-Z DOUT DOUT Don't Care DIN DIN High-Z Function Mode Standby Refresh Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write — * : "H" or "L" 3/21 www.DataSheet4U.com ¡ Semiconductor MSM5416258A ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Parameter Voltage on Any Pin Relative to VSS Short Circuit Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD Topr Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C — — Rating –1.0 to 7.0 50 1 0 to 70 –55 to 150 Unit V mA W °C °C Recommended Operating Conditions Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VSS VIH VIL Min. 4.5 0 2.4 –1.0 Typ. 5.0 0 — — Max. 5.5 0 (Ta = 0°C to 70°C) Unit V V V V VCC + 1.0 0.8 Capacitance Parameter Input Capacitance (A0 - A8) Input Capacitance (RAS, LCAS, UCAS, WE, OE) Input / Output Capacitance (DQ0 - DQ15) Symbol CIN1 CIN2 CI/O Typ. — — — (VCC = 5.0 V ±0.5 V, Ta = 25°C, f = 1 MHz) Max. 5 7 7 Unit pF pF pF 4/21 www.DataSheet4U.com ¡ Semiconductor DC Characteristics MSM5416258A (VCC = 5.0 V ±0.5 V, Ta = 0°C to 70°C) Parameter Output High Voltage Output Low Voltage Input Leakage Current Output Leakage Current Average Power Supply Current (Operating) Power Supply Current (Standby) Average Power Supply Current (RAS Only Refresh) Average Power Supply Current (Fast Page Mode) Average Power Supply Current (CAS before RAS Refresh) Symbol VOH VOL ILI ILO Condition IOH = –2.5 mA IOL = 2.0 mA 0 V £ VI £ VCC DQi Disable 0 V £ VO £ 5.5 V RAS, CAS Cycling, tRC = Min. RAS, CAS = VIH RAS = Cycling, CAS = VIH, tRC = Min. RAS = VIL, CAS Cycling, tHPC = Min. RAS = Cycling, CAS before RAS MSM5416258A -40 Min. 2.4 0 –10 –10 Max. VCC 0.4 10 10 MSM5416258A -45 Min. 2.4 0 –10 –10 Max. VCC 0.4 10 10 V V mA mA Unit Note ICC1 — 150 — 140 mA 1, 2 ICC2 — 3 — 3 mA 1 ICC3 — 150 — 140 mA 1, 2 ICC4 — 130 — 115 mA 1, 3 ICC5 — 150 — 140 mA 1, 2 Notes : 1. ICC Max. is specified as ICC for output open condition. 2. The address can be changed once .


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