DXTA44

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXTA44 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-89 .066(1.70) .059(1.50) .063(1.60) .055(1.40) Pinning 1 = Base 2 = Collector 3 = Emitter Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 400 400 6 300 1 +150 -55 to +150 Unit V V V mA W o o .167(4.25) .159(4.05) 1 2 3 .102(2.60) .095(2.40) .020(0.51) .014(0.36) .060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40) .016(0.41) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE1 hFE2 hFE3 hFE4 Cob 380µs, Duty Cycle 2% Min 400 400 6 40 50 45 40 - Typ 4 Max 100 500 100 0.375 0.75 0.75 300 6 Unit V V V nA nA nA V V V pF IC=1mA Test Conditions IC=100µA IE=10µA VCB=400V VCE=400V VEB=4V IC=20mA, IB=2mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=1mA, VCE=10V IC=10mA, VCE=10V IC=50mA, VCE=10V IC=100mA, VCE=10V VCB=20V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Col...