DMBTA44

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBTA44 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 450 400 6 300 350 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) .045(1.15) .034(0.85) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) hFE1 hFE2 hFE3 hFE4 Cob 380µs, Duty Cycle Min 450 400 6 40 50 45 40 2% Typ 4 Max 100 500 100 0.4 0.5 0.75 0.75 300 6 Unit V V V nA nA nA V V V V pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=400V VCE=400V VEB=4V IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=1mA, VCE=10...