DMBTA13

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBTA13 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring high current gain. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 30 30 10 300 225 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCES BVEBO ICBO IEBO VCE(sat) VBE(on) hFE1 hFE2 fT Cob 380µs, Duty Cycle Min 30 30 10 5K 10K 125 2% Typ - Max 100 100 1.5 2 6 Unit V V V nA nA V V MHz pF Test Conditions IC=100µA IC=100µA IE=10µA VCB=30V VEB=10V IC=100mA, IB=0.1mA IC=100mA, VCE=5V IC=10mA, VCE=5V IC=100mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz Collector-Emitter Saturation Voltage(1) B...