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DC COMPONENTS CO., LTD.
R
DMBT8550
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITA...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DMBT8550
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for general purpose amplifier applications.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.020(0.50) .012(0.30)
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -25 -20 -5 -500 225 +150 -55 to +150 Unit V V V mA mW
o o
.026(0.65) .010(0.25) .091(2.30) .067(1.70) .118(3.00) .110(2.80)
.045(1.15) .034(0.85)
.051(1.30) .035(0.90)
.0043(0.11) .0035(0.09)
.004 Max (0.10)
C
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT 380µs, Duty Cycle
Min -25 -20 -5 120 150 2%
Typ -
Max -1 -0.1 -0.6 -1.2 400 -
Unit V V V µA µA V V MHz
Test Conditions IC=-10µA IC=-1mA IE=-10µA VCB=-20V VEB=-3V IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA IC=-50mA, VCE=-1V IC=-20mA, VCE=-10V, f=100MHz
Collector-Emitter Saturation Voltage(1) Base-Emitter Saturati...