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DC COMPONENTS CO. , LTD.
R
DMBT5551
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring high breakdown voltage.
SOT-23
. 020(0. 50) . 012(0. 30)
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
. 063(1. 60) . 055(1. 40)
. 108(0. 65) . 089(0. 25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 180 160 6 600 225 +150 -55 to +150 Unit V V V mA mW
o o
. 091(2. 30) . 067(1. 70) . 118(3. 00) . 110(2...