DMBT5087

www.DataSheet4U.com DC COMPONENTS CO., LTD. R DMBT5087 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low noise, high gain, general purpose amplifier applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -50 -3 -50 225 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO1 ICBO2 VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Cob 380µs, Duty Cycle Min -50 -50 -3 250 250 250 40 2% Typ - Max -10 -50 -0.3 -0.85 800 4 Unit V V V nA nA V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-10V VCB=-35V IC=-10mA, IB=-1mA IC=-10mA, IB=-1mA IC=-0.1mA, VCE=-5V IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V IC=-0.5mA, VCE=-5V, f=100MHz VCB...