SENSITIVE GATE SILICON CONTROLLED RECTIFIER
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR106-3 THRU DCR106-8
TECHNICAL SPECIFICATION...
Description
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR106-3 THRU DCR106-8
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 4.0 Amperes
Description
* Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors
TO-126
.304(7.72) .285(7.52) .105(2.66) .095(2.41)
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
.041(1.05) .037(0.95) .154(3.91) .150(3.81)
.055(1.39) .045(1.14)
.152(3.86) .138(3.50)
Absolute Maximum Ratings(TA=25oC)
Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage DCR106-3 DCR106-4 DCR106-6 DCR106-8 Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG Rating 100 200 400 600 4.0 25 1.0 0.5 0.1 -40 to +110 -40 to +150 Unit V
.279(7.09) .275(6.99) 1 2 3
3 Typ .052(1.32) .048(1.22) 3 Typ
o
o
On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature
.620(15.75) .600(15.25)
A A A W W
o o
.032(0.81) .028(0.71) .189(4.80) .171(4.34)
.022 Typ (0.55)
3 Typ
o
3 Typ
o
C
Dimensions in inches an...
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