BAP63-01

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-01 Silicon PIN diode Preliminary specification 2001 Nov 01 Philips Semiconductors Preliminary specification Silicon PIN diode FEATURES High speed switching for RF signals Low diode capacitance Low diode forward resistance Very low series inductance For applications up to 3 GHz. handbook, halfpage BAP63-01 PINNING PIN DESCRIPTION cathode anode APPLICATIONS RF attenuators and switches. DESCRIPTION Planar PIN diode in a SOD723A ultra small plastic SMD package. Marking code: K5 Fig.1 Simplified outline (SOD723A) and symbol. ; 1 2 1 2 Top view MAM405 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Ptot Tstg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature Ts = 90 °C CONDITIONS − − − −65 −65 MIN. MAX. 50 100 315 +150 +150 UNIT V mA mW °C °C 2001 Nov 01 2 Philips Semiconductors Preliminary specification Silicon PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse leakage current diode capacitance IF = 50 mA VR =35 V VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 |s21 |2 isolation VR = 0; f = 900 MHz VR = 0; f = 1800 MHz V...