BAP50-05W

www.DataSheet4U.com JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03Z Plastic-Encapsulate Diodes FBAP50-05W DESCRIPTION Silicon planar FEATURES z Two elements in common cathode configuration in a small-sized package z Low diode capacitance z Low diode forward resistance.. APPLICATION General RF applications. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) pin Diodes WBFBP-03Z (2×2×0.5) unit: mm 3 1 2 MARKING: W4 3 W4 1 2 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Continuous reverse voltage Continuous Forward Current Power Dissipation (TA=90℃) thermal resistance from junction to soldering point Junction temperature Storage temperature range Symbol VR IF Pd Rthj-s Tj TSTG Limits 50 50 150 250 -65~+150 -65~+150 Unit V mA mW K/W ℃ ℃ Electrical Characteristics Parameter @TA=25℃ Symbol VR VF IR Cd1 Cd2 Cd3 rD rD rD τL LS 1.05 1.6 Min. 50 1.1 100 1.1 0.6 0.5 40 25 5 Typ. Max. Unit V V nA pF pF pF Ω Ω Ω μS nH Conditions IR=10µA IF=50mA VR=50V VR=0V,f=1MHz VR=1V,f=1MHz VR=5V,f=1MHz IF=0.5mA , f=100MHz IF=1mA , f=100MHz IF=10mA , f=100MHz When switched from IF=10mA to IR=6mA; RL=100;measured at IR=3mA IF=100mA; f=100MHz Continuous reverse voltage Forward voltage Reverse current Diode capacitance Diode forward resistance charge carrier life time series inductance Typical Characteristics FBAP50-05W Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0...