LPA6836V

Preliminary Data Sheet FEATURES ♦ 25 dBm Output Power at 1-dB Compression at 18 GHz ♦ 9.5 dB Power Gain at 18 GHz ♦ 55% Power-Added Efficiency ♦ Source Vias to Backside Metallization DRAIN BOND PAD LPA6836V MEDIUM POWER PHEMT WITH SOURCE VIAS GATE BOND PAD DESCRIPTION AND APPLICATIONS DIE SIZE: 15.4X14.2 mils (390x360 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 3.0X3.0 mils (75x75 µm) The FPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 360 µm Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for high dynamic range. Typical applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems, broad bandwidth amplifiers, and optical systems. Source vias have been added for improved performance and assembly convenience. Each via hole has 0.02 nH of inductance. Additionally, the via holes remove the need for source bond wires, meaning only two bond wires are required for assembly. Because the via connects the source pad to the backside metallization, self-bias configurations should be designed with caution. ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C Parameter Saturated Drain-Source Current Power at 1-dB Compression Power Gain at 1-dB Compressi...