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RB520G30-G

Comchip Technology

SMD Schottky Barrier Diode

www.DataSheet4U.com SMD Schottky Barrier Diode RB520G30-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 100 ...


Comchip Technology

RB520G30-G

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www.DataSheet4U.com SMD Schottky Barrier Diode RB520G30-G (RoHS Device) Reverse Voltage: 30 Volts Forward Current: 100 mA Features: Small Surface Mounting Type Low Reverse Current and Low Forward Voltage. High Reliability L E1 θ c E2 E b D + - SOD-723 Mechanical Data: Case: Molded plastic SOD-723 Terminals: Solderable per MIL-STD-750, Method 2026.1. Polarity: Indicated by cathode band. Mounting position: Any. Marking: E Symbol A A1 b c D E E1 E2 L θ Inches θ Min. Max. 0.021 0.026 0.020 0.023 0.010 0.014 0.003 0.006 0.022 0.026 0.035 0.043 0.051 0.059 0.008 REF 0.003 0.001 7º REF A1 A Millimeters Min. Max. 0.525 0.650 0.515 0.580 0.250 0.350 0.080 0.150 0.550 0.650 1.100 0.900 1.500 1.300 0.200 REF 0.010 0.070 7º REF Maximum Ratings (at TA=25ºC unless otherwise specified) Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR Io IFSM TJ Tstg Limits 30 100 500 125 -40~+125 Unit V mA mA ºC ºC Electrical Ratings (at TA=25ºC unless otherwise specified) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.45 0.5 Unit V μA Conditions IF=10mA VR=10V “-G” suffix designated RoHS compliant version Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1 SMD Schottky Barrier Diode RB520G30-G (RoHS Device) Electrical Characteristic Curves (RB520G30-G) Fig. 1 Forward Characteristics 1 1m 100μ 10μ 1μ Fig. 2 Reverse Characteristics 150ºC 125ºC...




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