MMBT2907A-G

www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT2907A-G (PNP) RoHS Device Features -Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. -Useful dynamic range exceeds to 600mA As a switch and to 100MHz as an amplifier. 0.044 (1.10) 0.035 (0.90) 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 0.066 (1.70) 2 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 0.020 (0.50) 0.013 (0.35) 0.006 (0.15) max 0.007 (0.20) min 1 Base 2 Emitter Dimensions in inches and (millimeter) Maximum Ratings(at T A =25 C unless otherwise noted) Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Tot al de vice di ssipa tioi n Th er mal res istan ce jun ction to ambi en t St or ag e tempe rat ur e an d jun ction tempe rat ur e O Symbol V CBO V CEO V EBO IC PD R JA Min Typ Max -60 -60 -5 -0.6 0. 35 35 7 Unit V V V A W o C/ W o T STG , T J -55 +1 50 C REV:A QW-BTR03 Page 1 General Purpose Transistor SMD Diodes Specialist Electrical Characteristics (at T A =25 C unless otherwise noted) Parameter Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Base cut-off current Collector cut-off current DC current gain O Conditions I C =10μA , I E =0 I C =10mA , I B =0 I E =10μA , I C =0 V CB =-50V , I E =0 V CE =-30V , V EB =-0.5V V CE =-30V ,...