Small Signal Transistor
MMBT2222A-G (NPN)
RoHS Device
Features
-NPN silicon epitaxial planar transistor for switching a...
Small Signal
Transistor
MMBT2222A-G (
NPN)
RoHS Device
Features
-
NPN silicon epitaxial planar
transistor for switching and amplifier application.
Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750, method 2026. -Approx. weight: 0.008 grams
Diagram:
Collector 3
1 Base
2 Emitter
SOT-23
0.055(1.40) 0.047(1.20)
0.041(1.05) 0.035(0.90)
0.118(3.00) 0.110(2.80)
3
12 0.079(2.00) 0.071(1.80)
0.006(0.15) 0.003(0.08)
0.100(2.55) 0.089(2.25)
0.020(0.50) 0.012(0.30)
0.004(0.10) max
0.020(0.50) 0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-continuous Power dissipation Thermal resistance, junction to ambient Junction temperature Storage temperature range
Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG
Value 75 40 6.0 600 300 417 150
-55 to +150
Units V V V mA
mW °C/W
°C °C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR30
Comchip Technology CO., LTD.
REV:B Page 1
Small Signal
Transistor
Electrical Characteristics (@TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage Base-Emitter saturation voltage T...
