LP7512P70

PACKAGED ULTRA LOW NOISE PHEMT FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW LP7512P70 DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 µ m by 200 µ m Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for optimum low noise performance. The LP7512’s active areas are passivated with Si3 N4 , and the P70 ceramic package is ideal for low-cost, high-performance applications that require a surface-mount package. Typical applications include low noise receiver preamplifiers in wireless systems. ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C* Parameter Saturated Drain-Source Current** Noise Figure Associated Gain at minimum NF Transconductance Gate-Source Leakage Current Gate-Drain Leakage Current Symbol IDSS NF GA GM IGSO IGDO Test Conditions VDS = 2 V; VGS = 0 V VDS = 2 V; IDS = 25% IDSS VDS = 2 V; IDS = 25% IDSS VDS = 2 V; VGS = 0 V VGS = -3 V VGS = -3 V -0.2 11 60 Min 15 0.7 12 90 1 1 -0.4 15 15 -1.5 Typ Max 30 1.0 Units mA dB dB mS µA µA V Pinch-Off Voltage VP VDS = 2 V; IDS = 1 mA *frequency=18 GHz, unless otherwise noted **Formerly binn...