ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consum...
ULTRA LOW NOISE PHEMT FEATURES ♦ 0.6 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ Low DC Power Consumption ♦ Excellent Phase Noise
DRAIN BOND PAD (2X) GATE BOND PAD (2X)
LP7512
SOURCE BOND PAD (2x)
DIE SIZE: 18.0X13.0 mils (460x330 µm) DIE THICKNESS: 3.9 mils (100 µm) BONDING PADS: 1.9X1.9 mils (50x50 µm)
DESCRIPTION AND APPLICATIONS The LP7512 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µ m by 200 µ m
Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for ultra low noise and usable gain to 40 GHz. The LP7512 also features Si3 N4 passivation and is available in a variety of packages. Typical applications include low noise receiver preamplifiers for commercial applications including wireless systems and radio link systems.
ELECTRICAL SPECIFICATIONS @ TAmbient = 25 ° C
Parameter Saturated Drain-Source Current Noise Figure Associated Gain at minimum NF Transconductance Gate-Source Leakage Current Gate-Drain Leakage Current Pinch-Off Voltage Thermal Resistivity frequency=18 GHz Symbol IDSS NF GA GM IGSO IGDO VP ΘJC Test Conditions VDS = 2 V; VGS = 0 V VDS = 2 V; IDS = 25% IDSS; f=12 GHz f=18 GHz VDS = 2 V; IDS = 25% IDSS; f=12 GHz f=18 GHz VDS = 2 V; VGS = 0 V VGS = -3 V VGD = -3 V VDS = 2 V; IDS = 1...
