DatasheetsPDF.com

LP750SOT89

Filtronic Compound Semiconductors
Part Number LP750SOT89
Manufacturer Filtronic Compound Semiconductors
Description LOW NOISE/ HIGH LINEARITY PACKAGED PHEMT
Published Mar 22, 2005
Detailed Description LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.8 GHz ♦ 17...
Datasheet PDF File LP750SOT89 PDF File

LP750SOT89
LP750SOT89

Overview
LP750SOT89 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • FEATURES ♦ 26 dBm Output Power at 1-dB Compression at 1.
8 GHz ♦ 17 dB Power Gain at 1.
8 GHz ♦ 0.
7 dB Noise Figure ♦ 40 dBm Output IP3 at 1.
8 GHz ♦ 55% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP750SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.
25 µm x 750 µm Schottky barrier gate, defined by electron-beam photolithography.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)