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2SA1302

Part Number	2SA1302
Manufacturer	Toshiba
Description	Silicon PNP Transistor
Published	Aug 7, 2007
Detailed Description	TOSHIBA Discrete Semiconductors Transistor Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and...
Datasheet	2SA1302 PDF File

Overview

TOSHIBA Discrete Semiconductors Transistor Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and Ampliﬁer Applications Features • Complementary to 2SC3281 • Recommended for 100W High Fidelity Audio Frequency - Ampliﬁer Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range VCBO -200 V VCEO -200 V VEBO -5 V IC -15 A IB -1.
5 A PC 150 W Tj 150 °C Tstg -55 ~ 150 °C Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION ...

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