RB085T-90

www.DataSheet4U.com RB085T-90 Diodes Schottky barrier diode RB085T-90 zApplications Switching power supply zExternal dimensions (Unit : mm) 4.5±0.3 　　　 0.1 zStructure 8.0±0.2 12.0±0.2 zFeatures 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability 1.2 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 15.0±0.4 　 0.2 13.5MIN ① zConstruction Silicon epitaxial planar 1.3 0.8 (1) (2) (3) 5.0±0.2 0.7±0.1 0.05 8.0 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature (*1)Tc=100℃max Per chip : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 10 100 150 -40 to +150 Unit V V A A ℃ ℃ zElectrical characteristic (Ta=25°C) Parameter Forward characteristics Reverse characteristics Thermal impedance Symbol VF IR θjc Min. Typ. Max. 0.83 150 2.5 Unit V µA ℃/W Conditions IF=5A VR=90V junction to case Rev.B 1/3 RB085T-90 Diodes zElectrical characteristic curves 10 Ta=150℃ 1 Ta=125℃ Ta=75℃ 0.1 Ta=25℃ Ta=-25℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 100000 10000 1000 100 Ta=150℃ Ta=125℃ Ta=75℃ Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz 100 10 1 0.1 0.01 Ta=-25℃ 10 0.01 0.001 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 10 20 REVERSE VOLTAGE...