NESG3031M14

www.DataSheet4U.com DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz SiGe HBT TECHNOLOGY (UHS3) ADOPTED: fmax = 110 GHz M14 PACKAGE: 4-pin lead-less minimold package M14 Package ORDERING INFORMATION PART NUMBER NESG3031M14-A NESG3031M14-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM 8 mm wide embossed taping Pin 1 (Collector), Pin 4 (Emitter) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note Tj Tstg RATINGS 12.0 4.3 1.5 35 150 150 −65 to +150 UNIT V V V mA mW °C °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PWB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. California Eastern Laboratories 1 N...