NESG2101M16

www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIPTION NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M16 M16 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MIN TYP 21 15 0.9 13.0 0.6 19.0 17.0 13.5 17 0.4 0.5 100 100 260 1.2 MAX PARAMETERS AND CONDITIONS Output Power at 1 dB Compression Point VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Linear Gain, VCE = 3.6 V, ICQ = 10 mA, f = 2 GHz, Noise Figure at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 10 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 7mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 7 mA, f = 1 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Gain1 at VCE = 3 V, IC = 50 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 50 mA, f ...