NESG2031M16

www.DataSheet4U.com NEC's NPN SiGe NESG2031M16 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16 DESCRIPTION NEC's NESG2031M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cre ICBO DC IEBO hFE Notes: 1. MSG = S21 S12 2. Collector to base capacitance when the emitter pin is grounded. 3. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %. 2 NESG2031M16 M16 UNITS dB dB dB dB dB dB dBm 15.0 19.0 16.0 MIN TYP 1.3 10.0 0.8 17.0 21.5 18.0 13 23 20 25 0.15 0.25 100 100 130 190 260 1.1 MAX PARAMETERS AND CONDITIONS Noise Figure at VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 5 mA, f = 5.2 GHz, ZS = ZSOPT, ZL = ZLOPT Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Associated Gain at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = ZSOPT, ZL = ZLOPT Maximum Stable Gain1 at VCE = 3 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at VCE = 3 V, IC = 20 mA, f = 2 GHz Output Power at 1dB Compression Point at VCE = 3 V, ICQ = 20 mA, f ...