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NESG2031M05

Part Number	NESG2031M05
Manufacturer	CEL
Description	NPN SiGe HIGH FREQUENCY TRANSISTOR
Published	Jul 31, 2007
Detailed Description	com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHN...
Datasheet	NESG2031M05 PDF File

Overview

com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.
8 dBm at 2 GHz NF = 1.
3 dBm at 5.
2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.
5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.
59 mm Flat lead style for better RF performance • • M05 DESCRIPTION NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise ampliﬁers, medium power ampliﬁers, and oscillators.
NEC s low proﬁle, ﬂat lead style M05 Package provides high frequency performa...

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