MBM29LV160BM

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-3E FLASH MEMORY CMOS 16 M (2M × 8/1M × 16) BIT MirrorFlashTM* MBM29LV160TM/BM 90 s DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to be programmed in-system with the standard 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for program or erase operations. The devices can also be reprogrammed in standard EPROM programmers. The standard MBM29LV160TM/BM offers access times of 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. (Continued) MBM29LV160TM/BM 90 3.0 V to 3.6 V 90 ns 90 ns 25 ns s PRODUCT LINE UP Part No. VCC Max Address Access Time Max CE Access Time Max OE Access Time s PACKAGES 48-pin plastic TSOP (1) Marking Side 48-ball plastic FBGA (FPT-48P-M19) (BGA-48P-M20) * : MirrorFlashTM is a trademark of Fujitsu Limited. Notes : Programming in byte mode ( × 8) is prohibited. Programming to the address that already contains data is prohibited (It is mandatory to erase data prior to overprogram on the same address) . MBM29LV160TM/BM90 (Continued) The MBM29LV160TM/BM supports command set compatible with JEDEC single-power-supply EEPROMS standard. Commands are written into...