MBM29BS32LF18

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20913-2E BURST MODE FLASH MEMORY CMOS 32M (2M × 16) BIT MBM29BS/BT32LF 18/25 s GENERAL DESCRIPTION The MBM29BS/BT32LF is a 32M bit, 1.8 Volt-only, Burst mode and dual operation Flash memory organized as 2M words of 16 bits each. The device offered in a 60-ball FBGA package. This device is designed to be programmed in-system with the standard system 1.8V VCC supply. (Continued) s PRODUCT LINE UP Part No. VCC VCCQ Clock Rate Max Latency Time (ns) Synchronous/Burst Max Burst Access Time (ns) Max OE Access Time (ns) Max Address Access Time (ns) Asynchronous Max CE Access Time (ns) Max OE Access Time (ns) MBM29BS/ BT32LF-25 1.8 V +0.15 V –0.15 V MBM29BT32LF-18 MBM29BS32LF-18 1.8 V 3.0 V +0.15 V –0.15 V +0.15 V –0.30 V 1.8 V 1.8 V +0.15 V –0.15 V +0.15 V –0.15 V 1.8 V/3.0 V 40 MHz ( − 25) 120 20 20 70 70 20.5 54 MHz ( − 18) 106.5 14 14 70 70 20 54 MHz ( − 18) 106 13.5 13.5 70 70 20 s PACKAGE 60-ball plastic FBGA (BGA-60P-M05) MBM29BS/BT32LF-18/25 (Continued) The device supports Enhanced VCCQ to offer up to 3 V compatible inputs and outputs(MBM29BS32LF:1.8V VCCQ, MBM29BT32LF:3.0V VCCQ). 12.0V VPP and 5.0V VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers. The device provides truly high performance non-volatile memory solution. The device offers fast burst access frequency of 54MHz with initial access times of 106ns, allowing operation of high-spe...