Part Number |
MB84VD23481FJ-70 |
Manufacturers |
Fujitsu Media Devices |
Logo |
|
Description |
64 M (X16) FLASH MEMORY & 32 M (X16) Mobile FCRAM |
Datasheet |
MB84VD23481FJ-70 Datasheet (PDF) |
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50310-2E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM
CMOS
64 M (×16) FLASH MEMORY & 32 M (×16) Mobile FCRAMTM
MB84VD23481FJ-70
s FEATURES
• Power Supply Voltage of 2.7 V to 3.1 V • High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (FCRAM) • Operating Temperature −30 °C to +85 °C • Package 65-ball FBGA
(Continued)
s PRODUCT LINE-UP
Flash Memory Power Supply Voltage ( V ) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf* = 2.7 V to 3.1 V 70 70 30 FCRAM VCCr* = 2.7 V to 3.1 V 65 65 40
*: Both VCCf and VCCr must be the same level when either part is being accessed.
s PACKAGE
65-ball plastic FBGA
(BGA-65P-M01)
MB84VD23481FJ-70
(Continued)
• FLASH MEMORY • 0.17 µm Process Technology • Simultaneous Read/Write Operations (Dual Bank) • FlexBankTM *1 Bank A : 8 Mbit (8 KB × 8 and 64 KB × 15) Bank B : 24 Mbit (64 KB × 48) Bank C : 24 Mbit (64 KB × 48) Bank D :.