MB84VD22184FM-70

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-50230-2E Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS 32M (×16) FLASH MEMORY & 4M (×16) STATIC RAM MB84VD22184FM-70/MB84VD22194FM-70 s FEATURES Power Supply Voltage of 2.7 V to 3.1 V High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM) Operating Temperature –30 °C to +85 °C Package 56-ball FBGA (Continued) s PRODUCT LINE UP Part No. Supply Voltage(V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) VCCf= 3.0V 70 70 30 VD22184FM / VD22194FM +0.1 V –0.3 V VCCs= 3.0V 70 70 35 +0.1 V –0.3 V Note: Both VCCf and VCCs must be in recommended operation range when either part is being accessed. s PACKAGE 56-ball plastic FBGA (BGA-56P-M03) MB84VD22184FM/VD22194FM-70 (Continued) — FLASH MEMORY Simultaneous Read/Write Operations (Dual Bank) Bank 1 : 8 Mbit (8 KB × 8 and 64 KB × 15) Bank 2 : 24 Mbit (64 KB × 48) Host system can program or erase in one bank, and then read immediately and simultaneously from the other bank with zero latency between read and write operations. Read-while-erase Read-while-program Minimum 100,000 Write/Erase Cycles Sector Erase Architecture Eight 4K word and sixty-three 32K word sectors in word mode Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture MB84VD22184: Top sector MB84VD22194: Bottom sector Embedded EraseTM * Algorithms Automaticall...