NE851M33

www.DataSheet4U.com DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES LOW PHASE DISTORTION, LOW VOLTAGE OPERATION IDEAL FOR OSC APPLICATIONS 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NE851M33-A NE851M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM 8 mm wide embossed taping Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC Ptot Note RATINGS 9.0 5.5 1.5 100 130 150 −65 to +150 UNIT V V V mA mW °C °C Tj Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. California Eastern Laboratories NE851M33 ELECTRICAL CHARACTERISTICS (TA =+25ºC) PARAMETER DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product (1) Gain Bandwidth Product (2) Insertion Power Gain (1) Insertion Power Gain (2) Noise Figure Reverse Transfer Capacitance fT fT |S21e|2 |S21e| NF Cre Note 2 2 SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT ICBO IEBO hFE Note 1 VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 1 V, IC = 5 ...