Part Number |
MB84VD21191EM-70 |
Manufacturers |
SPANSION |
Logo |
|
Description |
(MB84VD2118xEM-70 / MB84VD2119xEM-70) Stacked MCP (Multi-Chip Package) FLASH MEMORY |
Datasheet |
MB84VD21191EM-70 Datasheet (PDF) |
www.DataSheet4U.com
FUJITSU SEMICONDUCTOR DATA SHEET
DS05-50307-1E
Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM
16M (×8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM
MB84VD2118XEM-70/MB84VD2119XEM-70
s FEATURES
• Power Supply Voltage of 2.7 V to 3.3 V • High Performance 70 ns maximum access time (Flash) 70 ns maximum access time (SRAM) • Operating Temperature –40 °C to +85 °C • Package 56-ball FBGA
CMOS
(Continued)
s PRODUCT LINE-UP
Part No. Supply Voltage(V) Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) MB84VD2118XEM/MB84VD2119XEM VCCf*= 3.0 V 70 70 30
+0.3 V –0.3 V
VCCs*= 3.0 V +0.3V –0.3 V 70 70 35
*: Both VCCf and VCCs must be in recommended operation range when either part is being accessed.
s PACKAGE
56-ball plastic FBGA
(BGA-56P-M02)
MB84VD2118XEM/2119XEM-70
(Continued)
• FLASH MEMORY • Simultaneous Read/Write Operations (Dual Bank) Miltiple devices available with different bank sizes (Please refer to ORDERING INFORMATION) Host sys.