MAPRST1214-150UF

www.DataSheet4U.com MAPRST1214-150UF Preliminary Datasheet Revision 01/14/2003 FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ∗ Typcial Second Harmonic Level < -30dBc ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 70 4.0 19.5 580 200 -65 to +200 RADAR PULSED POWER TRANSISTOR 150W, 1.2-1.4 GHz, 6ms Pulse Width, 25% Duty Cycle OUTLINE DRAWING Units V V A W °C °C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Gain Flatness Collector Efficiency Input Return Loss Amplitude Pulse Droop Load Mismatch Stability Load Mismatch Tolerance BVCES ICES RTH POUT GP ΔG ηc RL Droop VSWR-S VSWR-T 70 150 7.4 45 9 - Max 4.0 0.3 1.25 0.5 1.5:1 3:1 Units V mA °C/W W dB dB % dB dB IC = 10 mA VCE = 40V Test Conditions VCC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, Pin = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W, F= 1.2, 1.3, 1.4 GHz VCC = 36V, PIN = 27W,...