MAPRST0912-50

www.DataSheet4U.com AVIONICS PULSED POWER TRANSISTOR 50 WATTS, 960-1215 MHz, 10us PULSE, 10% DUTY Features NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation High Efficiency Inter digitized Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package RoHS Compliant MAPRST0912-50 Outline Drawing 01 Nov 2006 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 65 3.0 5.3 220 -65 to +200 200 Units V V A kW °C °C Electrical Specifications: TC = 25 ± 5°C (ROOM AMBIENT ) Parameter Test Conditions Frequency Symbol BVCES ICES F = 960, 1090, 1215 MHz F = 960, 1090, 1215 MHz F = 960, 1090, 1215 MHz F = 960, 1090, 1215 MHz F = 960, 1090, 1215 MHz F = 960 MHz F = 960, 1090, 1215 MHz RTH(JC) PO GP Min 65 50 9.1 40 - Max 2.0 0.80 -9 10:1 1.5:1 Units V mA °C/W W dB % dB - Collector-Emitter Breakdown Voltage IC = 15mA Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Stability Load Mismatch Tolerance VCE = 40V Vcc = 50V, Pin = 6.2W Vcc = 50V, Pin = 6.2W Vcc = 50V, Pin = 6.2W Vcc = 50V, Pin = 6.2W Vcc = 50V, Pin = 6.2W Vcc = 50V, Pin = 6.2W Vcc = 50V, Pin = 6.2W ηC RL VSWR-T VSWR-S 1 M/A-C...