MAPR-001011-850S00

www.DataSheet4U.com AVIONICS PULSED POWER TRANSISTOR 850 WATTS, 1025-1150 MHz, 10us PULSE, 1% DUTY Features NPN Silicon Microwave Power Transistors Common Base Configuration Broadband Class C Operation High Efficiency Inter digitized Geometry Diffused Emitter Ballasting Resistors Gold Metallization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package RoHS Compliant MAPR-001011-850S00 Outline Drawing 11 Jan 2007 Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 80 3.0 250 11.6 -65 to +200 200 Units V V A kW °C °C Electrical Specifications: TC = 25 ± 5°C (ROOM AMBIENT ) Parameter Test Conditions Frequency Symbol BVCES ICES F = 1025, 1090, 1150 MHz F = 1025, 1090, 1150 MHz F = 1025, 1090, 1150 MHz F = 1025, 1090, 1150 MHz F = 1025, 1090, 1150 MHz F = 1025 MHz F = 1025, 1090, 1150 MHz RTH(JC) PIN GP Min 80 7.8 42 - Max 30 0.015 141 -9 5:1 1.5:1 Units V mA °C/W W dB % dB - Collector-Emitter Breakdown Voltage IC = 250mA Collector-Emitter Leakage Current Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability * VCE = 50V Vcc=50V, Pout=850W Vcc=50V, Pout=850W Vcc=50V, Pout=850W Vcc=50V, Pout=850W Vcc=50V, Pout=850W Vcc=50V, Pout=850W Vcc=50V, Pout=850W ηC RL VSWR-T VSWR-S * All spuri...