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RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V
8/20/03
Preliminary
MAPLST2122...
www.DataSheet4U.com
RF Power Field Effect
Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V
8/20/03
Preliminary
MAPLST2122-015CF
Features
Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.
Q Q Q
Package Style
15W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR, 5MHz offset, 4.096MHz BW) Q Output Power: 2.2W (typ.) Q Gain: 13dB (typ.) Q Efficiency: 17% (typ.) 10:1 VSWR Ruggedness (CW @ 15W, 28V, 2110MHz)
MAPLST2122-015CF
Q
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 54.7 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 3.2 Unit ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS
Transistor, 2110 — 2170 MHz, 15W, W-CDMA
MAPLST2122-015CF
8/20/2003
Preliminary
Characteristic DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(V CHARACTERISTICS Zero Gate Voltage Drain Leakage Current 28 Vdc, VGS (VDS DS = 65 GS = 0) Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (VGS = = 26 5 Vdc, V 0) DS == (V Vdc, V 0) DS GS G...
