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RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V
5/24/04
Preliminary
MAPLST1820...
www.DataSheet4U.com
RF Power Field Effect
Transistor LDMOS, 1800 — 2000 MHz, 60W, 26V
5/24/04
Preliminary
MAPLST1820-060CF
Features
Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Output Power: 30W Power Gain: 13dB (typ.) Efficiency: 35% (typ.)
Package Style
P-238
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 +20, -20 206 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RΘJC Max 0.85 Unit ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed.
RF Power LDMOS
Transistor, 1800 — 2000 MHz, 60W, 26V
MAPLST1819-060CF
5/24/04
Preliminary
Characteristic DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 26 Vdc, Id = 60 mA) Gate Quiescent Voltage (VDS = 26 Vdc, Id = 500 mA) Drain-Source On-Voltage (VGS = 10 Vdc, Id = 1 A) Forward Transconductance (VGS = 10 Vdc, Id = 1 A) DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacit...