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RF Power Field Effect Transistor LDMOS, 800—2200 MHz, 2W, 28V
4/14/05
Preliminary
MAPLST0822-002PP
Features
Designed for broadband commercial applications up to 2.2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability W-CDMA Performance at 2.17GHz, 28Vdc Ave...
