MAAPGM0029-DIE

www.DataSheet4U.com Amplifier, Power, 1W 3.5-6.5 GHz Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ Process MAAPGM0029-DIE 903240 — Preliminary Information Description The MAAPGM0029-Die is a 2-stage 1 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™) Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Wireless Local Loop ♦ 3.7- 4.2 GHz SatCom Electrical Characteristics: TB = 40°C1, Z0 = 50Ω, VDD = 8V, VGG = -2V, Pin = 16 dBm Parameter Bandwidth Output Power Power Added Efficiency 1-dB Compression Point Small Signal Gain Input VSWR Gate Current Drain Current Output Third Order Intercept Noise Figure 2 Harmonic 3 Harmonic 1. TB = MMIC Base T...